 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5211 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High Power Amplifier (HPA) . BLOCK DIAGRAM Vg1 Vg2 FEATURES RF frequency : 21.2 to 23.6 GHz Linear gain : 13 dB P1dB : 23 dBm DC power : Vd = 5 V, Id1 + Id2 = 270 mA In Out Vd1 Vd2 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Symbol Vd1, Vd2 Vg1, Vg2 Id1 Id2 Pin Ta Tstg Tmax Parameter Drain supply voltage Gate supply voltage Drain current 1 Drain current 2 RF input power Backside ambient temp. Storage temp. Maximum assembly temp. Ratings 6 -3 ~ 0.5 120 240 16 -20 ~ +70 -65 ~ +175 +300 Units V V mA mA dBm C C C ELECTRICAL CHARACTERISTICS (Ta = 25 C) Limits Symbol Gain VSWR in VSWR out P1dB IM3 Gain Input VSWR Output VSWR Output power at 1 dB compression point Inter modulation level Parameter Conditions Min. Vd = 5 V Id1 = 90 mA Id2 = 180 mA (RF off) f = 21.2, 23.6 GHz Single tone f = 21.2, 23.6 GHz Tow tone(10MHz off) Pout = 20 dBm 13.0 2.2 2.2 23.0 (22.0) Typ. Max. dB dBm dBc Units MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5211 K-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : M) 1410 620 GND 950 GND RF in GND 550 R(Vd1) Vd1 R(Vd2) GND Vd2 Vg1 Vg2 GND RF out GND 550 340 530 935 1380 1940 X Dimention 1.94 mm Y Dimention 0.95 mm MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5211 K-Band 2-Stage Power Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 5 V, Id1 = 90 mA, Id2 = 180 mA, Ta = 25 C) 20 S21 10 0 -10 -20 -30 10 S11 S22 15 20 25 Frequency [GHz] 30 Output Power Performances (Vd = 5 V, Id1 = 90 mA, Id2 = 180 mA, Ta = 25 C) 50 30 f = 22.4 GHz 40 25 20 15 10 5 -10 -5 0 5 10 Pin [dBm] 15 30 20 10 0 20 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5211 K-Band 2-Stage Power Amplifier AN EXAMPLE OF TEST CIRCUIT Vg1 Cb Vg2 Cb Vg1 RFin Vg2 RFout R(Vd1) Vd1 R(Vd2) GND Vd2 Cb Vd1 Vd2 Cb : Chip Condenser ( 39 pF ) Cb > 100 F MITSUBISHI ELECTRIC as of July '98 |
Price & Availability of MGFC5211
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |